GaAs-FET Power Amplifier, 800 ... 900 MHz
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Frequency range | 800..900 MHz |
Input power for P1dB | min. 14 dBm |
Output power P1dB | typ. 29 dBm (CW) ; typ. 800 mW (CW) |
Output power COFDM (Measured with QAM 64, single carrier, EVM: 2%) | min. 23 dBm ; min. 200 mW |
Gain (small signal) | min. 15 dB |
Gain flatness (small signal) | +/-0.5 dB (typ.) |
Harmonic rejection | min. 28 dB @ 28.7 dBm |
IM3 (Measured 2-tone, frequency spacing: 1 MHz) | min. 46 dBc @ 24.7 dBm PEP |
Efficiency | min. 20 % @ 29 dBm (CW) |
Supply voltage | +12 ... 14 V DC |
Current consumption | typ. 0.35 A |
Operating case temp. range | -20 ... +55 °C |
Dimensions (mm) | 50 x 30 x 22 |
Weight | 90 g (typ.) |