GaN-HEMT Power Amplifier,

KU PA 200270 - 10 B

Based on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power. The amplifier is temperature compensated and, despite its high gain (47dB), features a very low gain ripple of typically +/- 0.5dB across the full bandwidth. The high efficiency in combination with an extended operating temperature range of -20 ... + 80 degrees C allows the use of the amplifier module even under suboptimal cooling conditions. An overtemperature shutdown at +80 degrees C (with automatic restart) protects the module from overheating. The RF output tolerates arbitrary mismatch without causing instability or damage. In addition to the standard version with + 28V operating voltage (version A), the amplifier module is also available with wide-range supply voltage input (version B, +10 ... + 50V operating voltage). The module provides low-impedance monitoring outputs for measurement and monitoring of forward and backward power as well as operating temperature. Power supply, control and monitoring signals are provided via a robust I/O interface (9-pin Sub-D connector) with protection against reverse polarity, overvoltage and EMI.