The Amplifier is designed for X band pulsed power applications with up to 80% duty cycle. The amplifier uses
high performance Gallium Nitride (GaN) power transistors to achieve high output power combined with a
respectable efficiency at X-band. The amplifier provides excellent thermal stability through the use of a high
thermal conductivity carrier. The product is ideally suited for high power ATC and surveillance radar, general
purpose high power output stages.
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RF Output Frequency | 8.7 GHz - 9.3 GHz |
Output Power (P sat) | 53 dBm |
Small Signal Gain | 65 dB typ |
Power Supply | 28V, 52A at P sat |
Output Load VSWR | 2:1 |
Input RF Drive | <-10 dBm |
Voltage Ripple (Pk-Pk | 1V |
Pulse Width (for nominal 20% duty cycle) | 80 μsec |
Pulse Width (80% duty cycle 5 seconds active every 1 minute) | 400 μsec |
Duty Cycle (nominal operating) | 20% |
Duty Cycle (80% duty cycle 5 seconds active every 1 minute) | 80% |
Spurious (non harmonic) | -70 dBm |
Baseplate Temperature Monitor | 10 mV/˚C |
Current Monitor | 50 mV/A |
Dimensions (max) | 199 x 134 x 37.5 mm (L x W x H) mm |