This product comes from Alaris Linwave catalogues
Gunn Diode DC1279F-T77
LW36-701122
Active
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation in the 76 to 78 GHz band.
Additional information
Product Data sheet
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Specifications
| ACPR at MOP (BPSK,QPSK,8PSK, 10Msps,a=0.2) | -20dBc |
| Gain ripple over frequency (1GHz band, fixed temp at MOP | 4dB p-p |
| Gain ripple over temperature (fixed frequency at MOP) | 3dB p-p |
Product Applications
Test and Measurement
- Excellent ‘cold start’ performance at -40°C Low change in frequency with temperature Customised dF/dV specification available Low FM noise Increased efficiency compared with other GaAs Gunn devices Hermetic packaging Range of output powers; customised specification available Proven high reliability Repeatable performance in standard cavities Variety of reliability assurance testing available All products 100% millimetre-wave tested
